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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：40 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：12 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The J109-D26Z is an N-channel Silicon Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92-3 package with kinked leads for through-hole mounting. The device features a drain-source breakdown voltage of 25 V and supports a continuous drain current of 40 mA at 15 V gate-source bias. Key electrical characteristics include a maximum gate-source cutoff voltage of -2 V at 10 nA, a typical drain-source on-resistance of 12 ohms, and a maximum power dissipation of 625 mW. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel depletion mode operation utilizing silicon technology
- High thermal stability with a maximum junction temperature rating of 150°C
- Low input capacitance and high input impedance suitable for signal switching
Applications
- Analog signal switching circuits
- Voltage-controlled resistor applications
- Low-noise preamplifier stages
Procurement Notes
Verify the specific ordering suffix D26Z corresponds to the required tape and reel or cut tape packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the procurement channel provides valid traceability for the onsemi brand component.
Selection Notes
Select this component when a low-voltage, high-speed N-channel JFET switch is required. The 25 V breakdown voltage limits suitability for high-voltage power applications. Compare the 12 ohm on-resistance against circuit requirements for signal attenuation. Verify that the TO-92-3 package fits the available PCB real estate and thermal constraints.
Part Context
This part belongs to the J109 series of N-channel JFETs from onsemi. It shares functional similarities with other small-signal JFETs but is distinguished by its specific 25 V breakdown rating and TO-92-3 mechanical form factor. The D26Z suffix indicates specific manufacturing and packaging attributes defined by the supplier.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should evaluate generic N-channel JFETs with comparable V(BR)DSS and Rds(on) specifications. Cross-compatibility requires verification of pinout alignment and thermal resistance parameters.
