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The J110_D75Z is a silicon N-channel power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 30 A at 25 °C. The device utilizes a TO-220AB through-hole package with an isolated thermal pad. Key electrical characteristics include a maximum gate threshold voltage of 4 V and a typical on-resistance of 0.04 ohms at a gate drive of 10 V. The component is designed for general-purpose switching applications requiring low conduction losses.
Verify the specific suffix D75Z against the official onsemi datasheet to confirm packaging and tape-and-reel specifications. Ensure the component matches the required thermal and electrical ratings for the target application before procurement.
Select this component when a 60 V, 30 A N-channel MOSFET in a TO-220 package is required. Consider the on-resistance and thermal resistance values for heat dissipation requirements in the final design.
This part belongs to onsemi's discrete power MOSFET portfolio. It is commonly used in industrial and consumer electronics where robust switching performance and standard through-hole mounting are necessary.
Check for direct replacements within the same voltage and current class from onsemi or other manufacturers. Ensure pinout compatibility and thermal characteristics match the original design constraints.