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The J110RLRA is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SSOT-3 package and utilizes silicon technology. The device features a drain-source breakdown voltage of -25 V and a gate-source breakdown voltage of -25 V. It supports a continuous drain current of 10 mA with a maximum power dissipation of 460 mW. The component operates within a temperature range of -55 °C to +150 °C and has a typical on-resistance of 18 Ohms.
Verify the specific ordering suffix RLRA against official onsemi documentation to confirm reel quantity and tape specifications. Ensure the requested part matches the SSOT-3 package type and N-channel polarity required for the design. Cross-reference the manufacturer's latest datasheet to confirm RoHS compliance status and lead times before finalizing procurement orders.
Select this component when a small-form-factor N-channel JFET is required for low-current applications. The 10 mA drain current limit and 18 Ohm on-resistance define its suitability for signal paths rather than high-power switching. Verify that the -25 V breakdown ratings align with the circuit's maximum operating voltages to prevent device failure.
This component belongs to the MMBFJ110 family of N-channel JFETs from onsemi. While sharing core electrical characteristics, the RLRA suffix specifically denotes the reel packaging format. This distinguishes it from cut-tape or tube variants within the same product line, ensuring compatibility with automated surface-mount assembly processes.
Direct substitutes include other N-channel JFETs with similar -25 V breakdown and 10 mA current ratings. Verify pinout compatibility between the SSOT-3 package and potential replacements. Check datasheets for variations in on-resistance and gate leakage to ensure functional equivalence in the target application.