J111RL1G

$0.09

Description：JFET N-CH 35V TO92
Series：-

SKU:708c2185113a Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V TO92
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：30 Ohms
Power - Max：350 mW
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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J111RL1G

Overview

The onsemi J111RL1G is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for chopper applications. It operates within a drain-gate voltage range of -35 Vdc and a gate-source voltage range of -35 Vdc, with a maximum total device dissipation of 350 mW at 25°C. The zero-gate-voltage drain current (IDSS) ranges from 2.0 mA to 20 mA, while the static drain-source on resistance (rDS(on)) has a maximum value of 30 Ω. The device features a Gate-Source cutoff voltage (VGS(off)) between -3.0 V and -10 V. It is housed in a TO-92 package (Case 29-11, Style 5) and supports an operating junction temperature range from -65°C to +150°C.

Feature Summary

Designed specifically for use as a chopper transistor in precision analog circuits.
Provides low static drain-source on resistance for efficient signal switching.
Offers high gate-source breakdown voltage capability for robust operation.

Applications

Precision analog chopper-stabilized amplifiers
Low-level signal switching circuits
High-impedance input buffer stages

Procurement Notes

Verify that the ordering suffix RL1G corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Confirm that the component meets Pb-Free standards if environmental compliance is mandated by the design specifications. Ensure the requested quantity aligns with the standard shipping unit of 2000 units per reel to avoid partial reel handling issues during production.

Selection Notes

Select this component when a single N-channel depletion-mode JFET is required for chopper applications. Verify that the IDSS range of 2.0 mA to 20 mA fits the biasing requirements of the target circuit. Consider the TO-92 package constraints if space or thermal dissipation limits are critical factors in the system design.

Part Context

This part belongs to the J11x series of N-channel JFETs manufactured by onsemi. It shares the same electrical characteristics and pinout as the J112 model but differs in specific parameter tolerances such as IDSS and VGS(off). The series is optimized for low-noise and high-precision switching applications where stable channel resistance is essential.

Replacement Considerations

The J112 is the primary functional equivalent within the same product family. Verify that the specific IDSS and VGS(off) tolerances of the replacement match the original design requirements. Other generic N-channel JFETs may require significant circuit redesign due to differences in capacitance and transconductance characteristics.