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Product Detailed Parameters
- Description：JFET N-CH 35V TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The J112RLRAG is an N-channel depletion-mode JFET chopper transistor manufactured by onsemi. It utilizes a TO-92 (TO-226) package with three leads and operates within a junction temperature range of -65°C to +150°C. The device features a maximum drain-gate voltage of -35 Vdc and a total device dissipation of 350 mW at 25°C ambient temperature. Electrical characteristics include a gate-source breakdown voltage of 35 Vdc, a zero-gate-voltage drain current (IDSS) ranging from 2.0 mA to 20 mA, and a static drain-source on resistance (rDS(on)) between 30 Ω and 50 Ω.
Feature Summary
- N-channel depletion mode operation for chopper applications
- Lead-free packaging available
- High gate-source breakdown voltage capability
Applications
- Chopper circuits
- Analog switching
- Signal modulation
Procurement Notes
Verify the specific ordering suffix RLRA against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with lead-free soldering processes if required by the assembly environment. Cross-reference the part number with the manufacturer's latest datasheet revision to validate electrical parameters and mechanical dimensions before finalizing procurement.
Selection Notes
Select this component based on its N-channel depletion configuration and specified IDSS range. Evaluate the thermal management requirements given the 350 mW power dissipation limit. Confirm that the TO-92 package style meets the board layout constraints. Consider the switching characteristics and capacitance values for high-frequency signal integrity in the target application design.
Part Context
This device belongs to the J11x series of JFET chopper transistors produced by onsemi. The series includes variants such as J111 and J112, differentiated primarily by their zero-gate-voltage drain current ranges. The J112 variant specifically targets applications requiring the defined IDSS limits provided in the datasheet.
Replacement Considerations
J112G
FAQ
What is the pinout configuration for the J112RLRAG?
In the TO-92 package, Pin 1 is Drain, Pin 2 is Source, and Pin 3 is Gate.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
How does the IDSS range affect the rDS(on)?
The zero-gate-voltage drain current (IDSS) is the principal determinant of other J-FET characteristics; higher IDSS generally correlates with lower static drain-source on resistance.
