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Product Detailed Parameters
- Description：JFET N-CH 35V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：100 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi J113_D26Z is an N-channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting in a TO-92-3 package with kinked leads. It features a single transistor configuration and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum power dissipation of 625 mW, a gate-source breakdown voltage of -35 V, and a gate-source cutoff voltage of -5 V. The device exhibits a drain-source current of 2 mA at zero gate-source voltage and a maximum drain-source resistance of 100 Ohms.
Feature Summary
- N-channel JFET technology utilizing silicon construction
- Through-hole installation capability in a compact TO-92-3 package
- High thermal stability supporting operation up to 150°C
- Defined gate-source cutoff characteristics for switching applications
Applications
- Analog signal switching circuits
- Low-noise preamplifier stages
- Impedance matching buffers
- Constant current source implementations
Procurement Notes
Verify the specific suffix D26Z against the official onsemi datasheet to confirm lead form and tape/reel packaging details. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm that the received units match the specified TO-92-3 physical dimensions and pinout configuration before integration into the design.
Selection Notes
Select this component when an N-channel JFET with low input capacitance and high input impedance is required for analog signal paths. The TO-92-3 package suits prototyping and low-volume production where through-hole assembly is preferred. Consider the 625 mW power rating and -35 V breakdown voltage limits during circuit design to ensure reliable operation under expected load conditions and thermal environments.
Part Context
The J113 series represents a family of N-channel JFETs from onsemi, widely recognized for their use in audio and RF applications due to low noise characteristics. The J113_D26Z variant specifically denotes the commercial grade version packaged in TO-92-3. This component serves as a fundamental discrete semiconductor device within onsemi's broader portfolio of small-signal transistors and field-effect devices.
Replacement Considerations
Direct substitutes may include other N-channel JFETs in TO-92 packages such as the 2N5484 or 2N5485, provided pin compatibility and electrical parameters like Vgs(off) and Idss are verified. Always consult the manufacturer's replacement guide for qualified alternatives.
