J113_D75Z

Description：JFET N-CH 35V TO92-3
Series：-

SKU:9a8c3a7992c4 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V TO92-3
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：100 Ohms
Power - Max：625 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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J113_D75Z

Overview

The onsemi J113_D75Z is an N-channel Junction Field-Effect Transistor (JFET) designed for general-purpose amplification and switching applications. It features a single transistor configuration housed in a TO-92-3 through-hole package, measuring 4.19mm in length and 4.32mm in height. The device supports a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C. Key electrical parameters include a drain-source current of 2mA and a maximum drain-source resistance of 100Ω. The component is lead-free compliant and does not meet automotive standards.

Feature Summary

N-channel JFET configuration for signal processing
Through-hole mounting capability in standard TO-92 package
Lead-free construction for environmental compliance

Applications

General-purpose analog signal amplification
Electronic switching circuits
Audio pre-amplifier stages

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact packaging and quantity specifications. Ensure that procurement channels provide valid manufacturer traceability documentation. Confirm that the received components match the specified TO-92-3 physical dimensions and pinout configuration before integration into production assemblies.

Selection Notes

Select this component when a through-hole N-channel JFET with moderate power handling is required. Consider the 625mW dissipation limit and 100Ω resistance characteristics for circuit design. Evaluate thermal management requirements given the 150°C maximum operating temperature and verify compatibility with existing PCB layouts requiring TO-92 footprints.

Part Context

This part belongs to the JFET category within onsemi's discrete semiconductor portfolio. It serves as a fundamental active component for linear and switching applications. The J113 series provides reliable performance for general electronics, distinct from high-power or specialized RF transistor families offered by the manufacturer.