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Product Detailed Parameters
- Description：JFET P-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：250 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The J176_D26Z is a P-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates in the TO-92-3 package with formed leads for through-hole mounting. Key electrical specifications include a gate-source breakdown voltage of 30V and a drain current of 2mA at Vds=15V and Vgs=0. The device features a cutoff voltage of 1V at 10nA and an on-resistance of 250 Ohms. Maximum power dissipation is rated at 350mW.
Feature Summary
- P-Channel JFET configuration for signal switching applications
- Through-hole TO-92-3 package with formed leads
- Low leakage current characteristics suitable for precision circuits
Applications
- Analog signal switching
- High-impedance input stages
- Audio pre-amplifier circuits
Procurement Notes
Verify the manufacturer designation, as this part number appears in databases associated with Fairchild Semiconductor and other vendors. Confirm the specific datasheet version matches the required electrical tolerances. Ensure the TO-92-3 package form factor aligns with the target PCB footprint. Cross-reference the suffix D26Z with official component libraries to confirm lead forming specifications.
Selection Notes
Select this component for low-power analog switching tasks requiring high input impedance. Compare the 250 Ohm on-resistance against circuit requirements. Evaluate the 350mW power dissipation limit against thermal constraints. Consider the P-Channel polarity relative to N-Channel alternatives like the J112 series for complementary designs.
Part Context
This device belongs to the J174-J177 family of small-signal JFETs. These components are silicon-based junction field-effect transistors designed for general-purpose switching and amplification. The family shares similar pinouts and mechanical dimensions, facilitating design flexibility across different channel types and performance grades within the same package style.
Replacement Considerations
- J176/D26Z
- MMBFJ176
FAQ
What is the maximum gate-source breakdown voltage?
The maximum gate-source breakdown voltage is 30V.
What is the typical drain current specification?
The drain current is specified as 2mA at Vds=15V and Vgs=0.
Does this component support surface mount technology?
No, it is designed for through-hole mounting in a TO-92-3 package with formed leads.
