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The J304 is an N-channel RF amplifier and NPN epitaxial silicon transistor designed for electronic switching applications, including low ON resistance analog switching. It operates within a drain-gate voltage of 30 V and a gate-source voltage of -30 V. The device supports a maximum total device dissipation of 350 mW at 25°C, with a thermal resistance junction-to-case of 125 °C/W. Electrical characteristics include a gate-source breakdown voltage of -30 V and a forward transconductance ranging from 4500 to 7500 µS. It functions reliably across a temperature range of -55°C to +150°C.
Verify the manufacturer origin carefully, as the component was originally produced by Fairchild Semiconductor Corporation. Confirm current availability status, as older components may be discontinued or subject to obsolescence notices. Ensure the specific package type matches the required TO-92 footprint and pinout configuration for your design integration.
Select this component when an N-channel RF amplifier or switching transistor with moderate power dissipation capabilities is required. Consider the 350 mW thermal limit and the specific voltage ratings of 30 V for both drain-gate and gate-source interfaces. Evaluate the transconductance range if signal amplification linearity is critical for the intended application circuit.
The J304 belongs to the category of NPN epitaxial silicon transistors manufactured by Fairchild Semiconductor. It is housed in a standard TO-92 plastic package, which is suitable for through-hole mounting on printed circuit boards. This component represents a legacy part from Fairchild's portfolio before its semiconductor division became part of onsemi.
Public confirmed substitute part numbers are not available in the provided documentation.