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The J309_D26Z is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi. Designed for VHF and UHF amplifier applications, this component utilizes silicon technology and is housed in a TO-92 package with kinked leads for through-hole mounting. Key electrical specifications include a drain-source breakdown voltage of 40V and a gate-source breakdown voltage of 25V. The device supports a continuous drain current of 10mA at 25°C, with a typical transconductance of 2000µS. It operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 625mW.
Verify the specific D26Z suffix against the official onsemi datasheet to confirm lead configuration and packaging details. Ensure compatibility with through-hole assembly processes given the TO-92 kinked lead design. Cross-reference the part number with authorized distributors to confirm current manufacturing status and RoHS compliance documentation before finalizing procurement plans.
Select this component for designs requiring N-channel JFETs in VHF or UHF frequency ranges. Compare the 40V breakdown voltage and 10mA current limits against circuit requirements. Consider the TO-92 package constraints for PCB layout and thermal management. Evaluate alternative parts from the same family if different pin configurations or electrical thresholds are needed.
This part belongs to the J309 series of N-channel JFETs intended for radio frequency applications. It shares functional similarities with other VHF/UHF amplifiers like the BF245A but offers specific electrical characteristics defined by onsemi. The D26Z suffix indicates a particular tape-and-reel or bulk packaging variant distributed by onsemi.
Potential substitutes include the BF245A or 2N5484, provided they meet the VHF/UHF frequency and N-channel depletion requirements. Verify that replacement parts match the TO-92 package and electrical ratings such as breakdown voltage and transconductance.