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JAN2N5154 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 2A TO39. Review the specifications below when checking this part for your BOM.
The JAN2N5154 is a radiation-hardened NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is qualified to the JANS level under MIL-PRF-19500/544 for high-reliability applications requiring resistance to ionizing radiation up to 100 krad(Si). The device features a hermetically sealed metal can package, typically TO-5, designed for through-hole mounting. Key electrical ratings include a collector-emitter voltage of 80 V and a maximum collector current of 2 A. Total power dissipation is rated at 1 W at an ambient temperature of +25°C.
Verify that the specific order includes the JANS radiation hardness assurance qualification rather than standard commercial or JAN grades. Confirm the package style matches the required mechanical interface, as variants exist in both TO-5 and SMD configurations. Ensure compliance with export control classifications such as EAR99 if applicable to the destination region.
Select this component when radiation tolerance is a critical requirement for the application environment. Compare against other JANS-qualified devices in the same family based on specific voltage and current margins. Verify that the thermal management strategy supports the specified power dissipation limits within the intended operating temperature range.
This part belongs to the 2N5154 series of NPN power transistors produced by Microchip Technology. The JAN prefix indicates military-grade quality, while the full designation implies JANS radiation hardening. Related variants include the standard commercial 2N5154 and other radiation-hardened versions like the JANSD2N5154.
Public confirmed substitute part numbers: JANSD2N5154, JANTX2N5154L.
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