JAN2N5666

Single Bipolar Transistors Overview

The JAN2N5666 is an NPN power silicon switching transistor qualified per MIL-PRF-19500/455. It features a collector-emitter voltage (VCEO) of 200 Vdc and a collector current (IC) rating of 5.0 Adc. The device operates within a junction temperature range of -65°C to +200°C. Power dissipation is rated at 1.2 W at TA = +25°C and 15 W at TC = +100°C. Electrical characteristics include a minimum forward-current transfer ratio (hFE) of 40 at IC = 0.5 Adc and 1.0 Adc, with a maximum collector-emitter saturation voltage of 0.4 Vdc at IC = 3.0 Adc.

Single Bipolar Transistors Feature Summary

• Qualified for high-reliability military applications under MIL-PRF-19500/455 standards.
• Designed for robust power switching operations with extended thermal stability up to +200°C.
• Provides stable DC current gain suitable for precise control circuits.

Single Bipolar Transistors Applications

• Military-grade power switching systems
• High-reliability industrial control units
• Aviation electronic subsystems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with the required reliability level. Confirm that the component meets the exact electrical specifications mandated by the system design requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a verified NPN power transistor with a 200 V collector-emitter voltage and 5 A continuous current capability is required. Ensure the application environment supports the specified thermal operating range and that the package type aligns with the available mounting infrastructure.

Single Bipolar Transistors Part Context

This device belongs to the 2N5664 through 2N5667 series of NPN power silicon transistors manufactured by Microchip Technology. The JAN2N5666 variant specifically denotes the standard military qualification level defined by MIL-PRF-19500/455, distinguishing it from commercial or higher-tier radiation-hardened versions within the same family.

Single Bipolar Transistors Replacement Considerations

Direct replacements include the 2N5664, which shares identical collector-emitter voltage ratings but differs in other electrical parameters. Verify pinout compatibility and thermal derating curves before substituting any alternative part numbers from the same datasheet family.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage for the JAN2N5666?

The collector-emitter breakdown voltage (V(BR)CER) is specified as a minimum of 250 Vdc when tested at IC = 10mAdc.

How does the forward-current transfer ratio vary with collector current?

The hFE is guaranteed to be between 40 and 120 at IC = 0.5 Adc and drops to a minimum of 5.0 at IC = 5.0 Adc.

What are the switching time characteristics for this transistor?

The turn-on time (ton) is typically 0.25 μs, and the turn-off time (toff) ranges from 1.5 to 2.0 μs under standard test conditions.