Single Bipolar Transistors JAN2N6249 product image

JAN2N6249

  • Description:TRANS NPN 200V 10A TO3
  • Series:-

SKU:8ee0d6867a03 Category: Brand:

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JAN2N6249 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is TRANS NPN 200V 10A TO3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N6249

  • Description:TRANS NPN 200V 10A TO3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):200 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1A, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 10A, 3V
  • Power - Max:6 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3
  • Supplier Device Package:TO-3 (TO-204AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/510

Single Bipolar Transistors datasheet and documents for JAN2N6249

JAN2N6249

Single Bipolar Transistors Overview

The JAN2N6249 is a high-power NPN silicon transistor manufactured by Microsemi Corporation. It is qualified under MIL-PRF-19500/461 for military applications. The device utilizes a TO-3 metal can package designed for through-hole mounting. Key electrical specifications include a collector-emitter voltage (Vceo) of 80 V and a continuous collector current (Ic) of 10 A at case temperature. The maximum power dissipation is rated at 125 W when mounted to a case. The unit operates within a junction temperature range of -55°C to +175°C.

Single Bipolar Transistors Feature Summary

  • Military-grade qualification compliant with MIL-PRF-19500/461 standards
  • High power handling capability suitable for demanding industrial loads
  • Robust TO-3 metal can construction for effective thermal management

Single Bipolar Transistors Applications

  • Military radar systems requiring rugged discrete components
  • High-power amplifier stages in defense communication equipment
  • Industrial motor control circuits operating under extreme conditions

Single Bipolar Transistors Procurement Notes

Verify the specific revision level against the latest Microsemi datasheet before integration, as manufacturing processes may evolve. Confirm that the procurement channel provides traceability documentation required for military contracts. Ensure the component matches the exact MIL-PRF-19500/461 specification to guarantee performance consistency in critical deployments.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN configuration is required for military or harsh environment applications. The TO-3 package facilitates direct heatsink attachment for efficient thermal dissipation. Consider the 80 V rating and 10 A current capacity to ensure adequate headroom for the intended load switching or amplification requirements.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of high-power silicon transistors produced by Microsemi. These devices are engineered specifically for reliability in aerospace and defense sectors. The JAN prefix indicates compliance with strict military quality standards, distinguishing it from commercial grade equivalents which lack the rigorous testing protocols.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JANTX2N6249 and JANTXV2N6249. Verify pinout compatibility and thermal resistance characteristics when transitioning between these variants to ensure circuit integrity.

JAN2N6249JAN2N6249

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