Single Bipolar Transistors JAN2N6251 product image

JAN2N6251

$140.78
  • Description:TRANS NPN 350V 10A TO3
  • Series:-

SKU:a095852c157e Category: Brand:

  
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JAN2N6251 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 10A TO3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N6251

  • Description:TRANS NPN 350V 10A TO3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1.67A, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:6 @ 10A, 3V
  • Power - Max:5.5 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3
  • Supplier Device Package:TO-3 (TO-204AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/510

Single Bipolar Transistors datasheet and documents for JAN2N6251

JAN2N6251

Single Bipolar Transistors Overview

The JAN2N6251 is a high-performance NPN power silicon transistor manufactured by Microchip Technology. It is housed in a TO-3 (TO-204AA) through-hole package designed for robust industrial and audio applications. The device supports a collector-emitter voltage of 350 V and a continuous collector current of 10 A, with a total power dissipation rating of 5.5 W. This component serves as a reliable solution for high-voltage switching and amplification tasks requiring durable construction.

Single Bipolar Transistors Feature Summary

  • High-voltage capability suitable for demanding power environments
  • Robust TO-3 metal can package for enhanced thermal management
  • Designed for use in high-power amplifier circuits

Single Bipolar Transistors Applications

  • Audio power amplification systems
  • Industrial power control circuits
  • High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as JAN2N6251 components have been produced by multiple entities including Microsemi and Microchip. Confirm that the received unit matches the required military or commercial grade specifications. Ensure the TO-3 package dimensions align with your existing heatsink and mounting infrastructure before finalizing the order.

Single Bipolar Transistors Selection Notes

Select this transistor when a high-voltage NPN configuration is required alongside significant current handling capabilities. The TO-3 package offers superior heat dissipation compared to plastic packages, making it ideal for applications where thermal stability is critical. Consider the 5.5 W power limit and ensure adequate cooling solutions are integrated into the system design.

Single Bipolar Transistors Part Context

The JAN2N6251 belongs to the family of high-power NPN transistors utilized in specialized electronics. It is often associated with legacy aerospace and defense standards due to its ruggedized construction. The component provides a stable interface between low-power control signals and high-power loads in linear and switching modes.

Single Bipolar Transistors Replacement Considerations

  • JAN2N5686

Single Bipolar Transistors FAQ

What is the maximum collector current for the JAN2N6251?

The maximum continuous collector current is 10 A.

Does the JAN2N6251 support high-voltage operation?

Yes, it supports a collector-emitter voltage of up to 350 V.

JAN2N6251JAN2N6251
$140.78
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