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JAN2N6251 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 10A TO3. Review the specifications below when checking this part for your BOM.
The JAN2N6251 is a high-performance NPN power silicon transistor manufactured by Microchip Technology. It is housed in a TO-3 (TO-204AA) through-hole package designed for robust industrial and audio applications. The device supports a collector-emitter voltage of 350 V and a continuous collector current of 10 A, with a total power dissipation rating of 5.5 W. This component serves as a reliable solution for high-voltage switching and amplification tasks requiring durable construction.
Verify the specific manufacturer source, as JAN2N6251 components have been produced by multiple entities including Microsemi and Microchip. Confirm that the received unit matches the required military or commercial grade specifications. Ensure the TO-3 package dimensions align with your existing heatsink and mounting infrastructure before finalizing the order.
Select this transistor when a high-voltage NPN configuration is required alongside significant current handling capabilities. The TO-3 package offers superior heat dissipation compared to plastic packages, making it ideal for applications where thermal stability is critical. Consider the 5.5 W power limit and ensure adequate cooling solutions are integrated into the system design.
The JAN2N6251 belongs to the family of high-power NPN transistors utilized in specialized electronics. It is often associated with legacy aerospace and defense standards due to its ruggedized construction. The component provides a stable interface between low-power control signals and high-power loads in linear and switching modes.
The maximum continuous collector current is 10 A.
Yes, it supports a collector-emitter voltage of up to 350 V.
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