Single Bipolar Transistors JAN2N6299P product image

JAN2N6299P

$30.58
  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-

SKU:f0d7959e7e71 Category: Brand:

  
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JAN2N6299P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP DARL 80V 8A TO66. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N6299P

  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 80mA, 8A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:64 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for JAN2N6299P

JAN2N6299P

Single Bipolar Transistors Overview

The JAN2N6299P is a single PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes a Darlington configuration housed in a TO-66 through-hole package. The device supports a collector-emitter breakdown voltage of 80 V and handles a maximum continuous collector current of 8 A. It features a power dissipation rating of 64 W with a saturation voltage of 2 V at specified test conditions.

Single Bipolar Transistors Feature Summary

  • Darlington PNP configuration for high current gain
  • Robust TO-66 hermetic metal package construction
  • High power dissipation capability for thermal management

Single Bipolar Transistors Applications

  • High-power switching circuits
  • Industrial control systems
  • Military and aerospace electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation prior to procurement, as this component may be subject to military or aerospace qualification standards. Confirm that the TO-66 package dimensions match the mechanical constraints of the target assembly. Ensure that the supplier provides appropriate handling instructions for hermetic packages to maintain seal integrity during installation.

Single Bipolar Transistors Selection Notes

Select the JAN2N6299P when high current switching with moderate voltage requirements is necessary in rugged environments. The Darlington structure offers significant current amplification compared to standard BJTs. Consider the thermal resistance of the TO-66 case for heat sink design. Evaluate the 2V saturation voltage against system efficiency requirements under full load conditions.

Single Bipolar Transistors Part Context

This component belongs to the family of single bipolar transistors produced by Microchip Technology. It serves as a discrete power semiconductor solution within their broader portfolio of electronic components. The JAN2N6299P is distinct from integrated circuits, providing a fundamental building block for analog and power electronics designs requiring robust switching capabilities.

Single Bipolar Transistors Replacement Considerations

  • JAN2N6299

Single Bipolar Transistors FAQ

What is the maximum collector current for the JAN2N6299P?

The maximum continuous collector current is 8 A.

Does the JAN2N6299P use a standard BJT or Darlington configuration?

It uses a Darlington configuration to achieve higher current gain.

JAN2N6299PJAN2N6299P
$30.58
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