JAN2N7334

FET, MOSFET Arrays Overview

The JAN2N7334 is a quad N-channel enhancement mode MOSFET manufactured by Microsemi Corporation. It features a maximum drain-source voltage of 100 V and a continuous drain current of 1 A per channel. The device utilizes a 14-DIP package with a 0.300-inch (7.62 mm) body width, conforming to the MO-036AB outline. Designed for military specifications under MIL-PRF-19500/621, it operates within a junction temperature range of -65°C to +200°C. This component serves as a high-reliability discrete semiconductor solution for rugged electronic applications requiring multiple isolated switching channels in a single through-hole package.

FET, MOSFET Arrays Feature Summary

• Quad N-channel configuration providing four independent switching elements in one package
• Military-grade qualification ensuring reliability under extreme environmental conditions
• High thermal stability supporting operation up to 200°C junction temperature
• Through-hole mounting compatibility via standard 14-pin DIP footprint

FET, MOSFET Arrays Applications

• Military aerospace control systems
• Ruggedized industrial power switching
• High-reliability communication equipment
• Defense electronics signal routing

FET, MOSFET Arrays Procurement Notes

Verify that the specific order includes the correct JAN prefix to ensure compliance with military quality standards. Confirm package integrity upon receipt, as lead times may vary significantly due to specialized manufacturing processes. Ensure storage conditions meet specified humidity and temperature limits to preserve device performance before assembly.

FET, MOSFET Arrays Selection Notes

Select this component when multiple isolated N-channel switches are required in a single package for space-constrained military designs. Consider the 100V rating and 1A current limit against load requirements. Evaluate thermal management needs given the 200°C junction capability. Compare against alternative quad MOSFETs if lower voltage ratings suffice for the application.

FET, MOSFET Arrays Part Context

This part belongs to the JAN series of microelectronics, which denotes devices qualified to strict military performance requirements. The JAN2N7334 specifically implements a quad MOSFET architecture, differing from single or dual transistor variants. It represents a legacy but critical component for maintaining compatibility in established defense and aerospace hardware platforms requiring proven reliability.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Cross-reference only with exact JAN2N7334 equivalents meeting MIL-PRF-19500/621 specifications.