FET, MOSFET Arrays JAN2N7335 product image

JAN2N7335

  • Description:MOSFET 4P-CH 100V 0.75A
  • Series:-

SKU:95c9d9bd832d Category: Brand:

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JAN2N7335 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET 4P-CH 100V 0.75A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for JAN2N7335

  • Description:MOSFET 4P-CH 100V 0.75A
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:750mA
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:14-DIP (0.300", 7.62mm)
  • Supplier Device Package:-
  • Grade:Military
  • Qualification:MIL-PRF-19500/599

FET, MOSFET Arrays datasheet and documents for JAN2N7335

JAN2N7335

FET, MOSFET Arrays Overview

The JAN2N7335 is a high-reliability, hermetically sealed P-channel silicon power MOSFET manufactured by Microsemi. It features a four-element configuration housed in a ceramic metal-sealed MO-036AB DIP package with 14 pins. The device operates in enhancement mode and provides a drain-source breakdown voltage of 100 V with a maximum continuous drain current of 0.75 A. It exhibits a maximum on-resistance of 1.73 ohms and supports an avalanche energy rating of 75 mJ.

FET, MOSFET Arrays Feature Summary

  • Hermetically sealed construction for harsh environment reliability
  • Four-element internal configuration with built-in diodes
  • Enhancement mode operation using silicon MOS technology

FET, MOSFET Arrays Applications

  • Military aerospace power switching systems
  • High-reliability industrial control circuits
  • Avionics power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against the official datasheet to confirm exact electrical tolerances and qualification levels. Ensure the procurement documentation explicitly states the hermetic seal status and military compliance requirements. Confirm that the supplier provides traceable manufacturing records consistent with the original manufacturer's specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a ruggedized, multi-element P-channel solution is required for critical applications. The hermetic package ensures stability under extreme thermal and mechanical stress. Evaluate the 1.73 ohm on-resistance against system power loss constraints and verify that the 100 V breakdown voltage aligns with the circuit's maximum operating limits.

FET, MOSFET Arrays Part Context

This part belongs to the JAN series of discrete semiconductors designed for defense and space applications. It represents a specialized variant of the standard 2N7335 family, distinguished by its rigorous quality assurance and hermetic packaging standards mandated for long-term operational reliability in uncontrolled environments.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with JANTX2N7335 or commercial equivalents only if non-hermetic packaging is acceptable. Verify pinout compatibility and ensure the substitute meets the same 100 V and 0.75 A ratings.

JAN2N7335JAN2N7335

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