JANKCBM2N5004

Single Bipolar Transistors Overview

The JANKCBM2N5004 is an NPN power silicon transistor manufactured by Microsemi Corporation. It features a stud mount configuration designed for high-power applications. The device supports a maximum collector current of 5 A and a maximum collector-emitter breakdown voltage of 80 V. It operates within a junction temperature range of -65°C to 200°C. The maximum collector-emitter saturation voltage is specified as 1.5 V at a base current of 500 mA and collector current of 500 mA.

Single Bipolar Transistors Feature Summary

• NPN power bipolar junction transistor architecture
• Stud mount package for efficient thermal management
• Extended operating temperature range up to 200°C

Single Bipolar Transistors Applications

• High-power switching circuits
• Industrial power control systems
• Automotive electronics requiring robust thermal performance

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer suffix and mounting style against official datasheets before procurement. Confirm that the stud mount variant matches the mechanical requirements of the target application. Ensure compliance with RoHS directives if required, noting that military variants may have different environmental specifications. Cross-reference part numbers carefully to distinguish between standard and specialized packaging options.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and wide temperature operation are critical. The stud mount design facilitates direct heat sinking, making it suitable for dense power layouts. Evaluate the 80 V breakdown voltage against circuit peak voltages to ensure adequate safety margins. Consider the saturation voltage characteristics for efficiency calculations in low-voltage, high-current scenarios.

Single Bipolar Transistors Part Context

This part belongs to the Microsemi (now Microchip) power transistor portfolio, specifically utilizing the JAN prefix which often denotes military or aerospace-grade quality levels. It is distinct from standard commercial equivalents by its ruggedized construction and extended temperature capabilities, targeting demanding environments where reliability is paramount.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN power transistors with similar 5 A current ratings and stud mount packages. Verify pinout compatibility and thermal resistance values when replacing. Ensure the replacement device meets the same 200°C junction temperature requirement for equivalent performance in high-heat applications.