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JANKCC2N3499 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 100V 0.5A TO39. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for JANKCC2N3499
- Description：TRANS NPN 100V 0.5A TO39
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39 (TO-205AD)
- Grade：Military
- Qualification：MIL-PRF-19500/366
Single Bipolar Transistors datasheet and documents for JANKCC2N3499
Single Bipolar Transistors Overview
The JANKCC2N3499 is a radiation-hardened NPN silicon switching transistor manufactured by Microchip Technology. It features a maximum collector current of 500 mA and a collector-emitter voltage rating of 100 V. The device dissipates 1 W of power and operates within a temperature range of -65°C to +200°C. Packaged in a TO-39 (TO-205AD) through-hole configuration, it is designed for high-reliability applications requiring radiation hardness assurance.
Single Bipolar Transistors Feature Summary
- Radiation hardened design qualified for high-reliability environments
- Silicon NPN construction optimized for switching applications
- Extended operating temperature range up to +200°C
Single Bipolar Transistors Applications
- High-reliability aerospace electronics
- Satellite communication systems
- Military avionics circuits
Single Bipolar Transistors Procurement Notes
Verify the specific radiation hardness level qualification required for your application against the manufacturer's documentation. Confirm that the TO-39 package meets your mechanical mounting constraints. Ensure the supplier provides traceable documentation for the JANSP or equivalent radiation grade as specified in the official datasheet.
Single Bipolar Transistors Selection Notes
Select this component when radiation tolerance and wide temperature operation are critical requirements. Compare the 100 V breakdown voltage and 500 mA current limits against circuit demands. Consider the TO-39 metal can package for thermal management and shielding needs in harsh environments.
Single Bipolar Transistors Part Context
This part belongs to the family of radiation-hardened NPN silicon switching transistors. It shares core electrical characteristics with standard 2N3499 variants but includes enhanced processing for radiation resistance. The JAN prefix indicates military-grade reliability standards.
Single Bipolar Transistors Replacement Considerations
Public confirmed substitute part numbers include JANS2N3499 and JANTX2N3499. Verify radiation qualification levels before substitution.
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