Diode Arrays JANS1N6642UBD product image

JANS1N6642UBD

$60.22
  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-

SKU:6e81fcf93009 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

JANS1N6642UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 300MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N6642UBD

  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io) (per Diode):300mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 75 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/578

Diode Arrays datasheet and documents for JANS1N6642UBD

JANS1N6642UBD

Diode Arrays Overview

The JANS1N6642UBD is a silicon switching diode manufactured by Microchip Technology under the MIL-PRF-19500/578N specification. It features a peak reverse voltage of 75 V and an average forward current of 300 mA. The device operates within a temperature range of -65°C to +175°C, with a maximum junction temperature of 200°C. Key electrical parameters include a reverse current of 500 nA at 75 V, a forward voltage of 1.2 V at 300 mA, and a recovery time of 5 ns. It utilizes a D-5D-2 surface-mount package.

Diode Arrays Feature Summary

  • Compliant with MIL-PRF-19500/578N for military-grade reliability
  • Designed for high-temperature operation up to 175°C
  • Fast switching capability with 5 ns recovery time
  • Surface-mount construction in a compact ceramic package

Diode Arrays Applications

  • Military aerospace signal processing circuits
  • High-reliability computer diode applications
  • Harsh environment switching systems

Diode Arrays Procurement Notes

Verify the specific quality level designation (JANS) against project requirements. Confirm compliance with the latest Product Change Notification dated January 23, 2024. Ensure the ordering suffix matches the required packaging format. Cross-reference the manufacturer part number with official Microchip documentation to validate authenticity and specifications before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring strict adherence to military standards and extended temperature ranges. Compare the 300 mA forward current rating against circuit demands. Evaluate the 75 V reverse voltage limit relative to system operating conditions. Consider the surface-mount package constraints during PCB layout design.

Diode Arrays Part Context

This device belongs to the 1N6642 series of silicon switching diodes produced by Microchip Technology. It shares core electrical characteristics with other variants in the family but is distinguished by its JANS quality level certification. The series is designed for robust performance in demanding electronic environments.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

JANS1N6642UBDJANS1N6642UBD
$60.22
Buy Now

Recent News