JANS2N2906AL

Single Bipolar Transistors Overview

The JANS2N2906AL is a radiation-hardened PNP silicon switching transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/291 and designed for high-reliability applications. The device features a maximum collector-emitter voltage of 60 V and a maximum DC collector current of 600 mA. Total power dissipation is rated at 500 mW. It operates within a temperature range of -65°C to +200°C and utilizes a TO-206AA (TO-18) through-hole package.

Single Bipolar Transistors Feature Summary

• Radiation hardening up to 100K rads (Si)
• Qualified per MIL-PRF-19500/291
• High operating junction temperature capability

Single Bipolar Transistors Applications

• Military aerospace systems
• Satellite electronics
• High-radiation environment circuits

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for your application, as the JANS series typically supports up to 100K rads. Confirm that the TO-206AA package meets your mechanical constraints. Ensure compliance with MIL-PRF-19500/291 standards is documented for procurement acceptance.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is critical. Compare against JAN or JANTX variants if radiation resistance is not required, as they may offer different cost structures. Verify the 60V voltage rating aligns with circuit requirements. Consider thermal management due to the 500 mW dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the 2N2906A family of PNP transistors. It supersedes older MIL-S-19500/291E specifications. The JANS prefix indicates a specific radiation-hardened processing level distinct from standard commercial or military grades like JAN or JANTX.

Single Bipolar Transistors Replacement Considerations

JANSL2N2906AUBC offers similar radiation hardening but in a different package configuration. Standard 2N2906A devices lack radiation hardening and are not suitable direct replacements for high-radiation environments.