SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
JANS2N5152L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 2A TO-5AA. Review the specifications below when checking this part for your BOM.
The JANS2N5152L is a radiation-hardened NPN power silicon transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/544 for high-reliability applications, offering a maximum collector current of 2A and a collector-emitter breakdown voltage of 80V. The device operates within a junction temperature range of -65°C to +200°C and features a hermetic metal can package.
Verify that the specific order includes the JANS radiation hardness assurance suffix, as standard commercial variants lack this qualification. Confirm compliance with MIL-PRF-19500/544 requirements for your specific mission profile. Ensure procurement channels are authorized to handle military-grade components subject to export controls.
Select this component when radiation tolerance is critical for system longevity in space or high-altitude environments. Compare against other JANS series transistors to ensure voltage and current ratings match the circuit design. Verify package compatibility with existing board layouts before finalizing the selection.
This part belongs to the JANS family of radiation-hardened bipolar junction transistors from Microchip Technology. It serves as a specialized variant of the standard 2N5152, enhanced for harsh radiation environments while maintaining similar electrical characteristics for direct functional substitution in hardened designs.
JANSL2N5152L (Lower radiation level)
The JANS2N5152L is qualified up to the JANSF level, which corresponds to 300K rads (Si).
No, the JANS2N5152L utilizes a long-lead through-hole metal can package, distinct from the U3 SMD variant.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.