Single Bipolar Transistors JANSL2N3439L product image

JANSL2N3439L

$229.70
  • Description:TRANS NPN 350V 1A TO-5AA
  • Series:-

SKU:8bd890045fff Category: Brand:

  
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JANSL2N3439L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 1A TO-5AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSL2N3439L

  • Description:TRANS NPN 350V 1A TO-5AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
  • Power - Max:800 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 200°C
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:Military
  • Qualification:MIL-PRF-19500/368

Single Bipolar Transistors datasheet and documents for JANSL2N3439L

JANSL2N3439L

Single Bipolar Transistors Overview

The JANSL2N3439L is a high-voltage NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for rugged environments, this component features a maximum collector-emitter voltage of 350V and a continuous collector current rating of 1A. It is housed in a hermetically sealed TO-39 metal can package suitable for through-hole mounting. The device supports a maximum power dissipation of 800mW and operates within an extended temperature range from -65°C to +200°C. It complies with MIL-PRF-19500/560 specifications.

Single Bipolar Transistors Feature Summary

  • Hermetically sealed TO-39 metal can construction ensuring environmental protection
  • High voltage capability rated at 350V collector-emitter breakdown
  • Extended thermal performance supporting operation up to 200°C junction temperature
  • Qualified for military standards under MIL-PRF-19500/560

Single Bipolar Transistors Applications

  • Military aerospace power switching circuits
  • High-voltage industrial control systems
  • Ruggedized analog signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix L against the official Microchip datasheet to confirm package and qualification details. Ensure procurement channels provide traceability documentation required for MIL-PRF-19500/560 compliance. Confirm RoHS status as these parts often fall outside standard consumer regulations. Validate that the supplier source matches the manufacturer's authorized distribution network to prevent counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation in harsh thermal conditions. The TO-39 package necessitates through-hole PCB layouts rather than surface mount alternatives. Consider the 800mW power limit when calculating thermal management requirements. Verify that the 1A current rating aligns with the load demands without exceeding safe operating area boundaries.

Single Bipolar Transistors Part Context

This part belongs to the 2N3439 family of high-voltage NPN transistors produced by Microchip Technology. It shares core electrical characteristics with other variants in the series but differs in packaging and qualification levels. The JAN prefix indicates a specific military-grade screening level compared to commercial equivalents.

Single Bipolar Transistors Replacement Considerations

  • JANTXV2N3439U4

JANSL2N3439LJANSL2N3439L
$229.70
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