JANSL2N5153

Single Bipolar Transistors Overview

The JANSL2N5153 is a radiation-hardened PNP power silicon transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/545 and designed for high reliability in harsh environments. The device features a maximum collector current of 2 A, a collector-emitter voltage of 80 V, and a collector-base voltage of 100 V. It operates within a temperature range of -65°C to +200°C with a power dissipation of 1 W. The component utilizes a TO-39 metal can package and provides a minimum DC current gain (hFE) of 20.

Single Bipolar Transistors Feature Summary

• Radiation hardened to withstand up to 50K rads (Si) total ionizing dose
• Qualified to MIL-PRF-19500/545 standards for military grade reliability
• High thermal stability with an operating junction temperature up to 200°C

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• Satellite communication circuits
• High-reliability power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for the application, as the JANSL variant is rated for 50K rads (Si). Confirm that the TO-39 through-hole package aligns with the target PCB layout constraints. Ensure compliance with MIL-PRF-19500/545 specifications during acceptance testing. Check for any specific lot traceability requirements mandated by the procurement contract.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is critical for system longevity in space or high-altitude operations. Compare against lower-grade variants like the standard 2N5153 if environmental conditions do not require hardening. Consider the TO-39 package size limitations relative to available board space. Evaluate the 2 A current rating against peak load demands to ensure adequate safety margins.

Single Bipolar Transistors Part Context

This part belongs to the 2N515x family of radiation-hardened PNP transistors produced by Microchip Technology. The family includes various radiation levels such as JANSM, JANSD, JANSP, JANSL, JANSR, and JANSF. These devices are engineered for consistent performance under intense ionizing radiation exposure, distinguishing them from commercial silicon counterparts.

Single Bipolar Transistors Replacement Considerations

• JANSL2N5151
• JANSL2N5153U3

Single Bipolar Transistors FAQ

What is the total ionizing dose radiation tolerance for the JANSL2N5153?

The JANSL2N5153 is qualified to withstand up to 50K rads (Si) total ionizing dose.

Does the JANSL2N5153 meet military qualification standards?

Yes, the device is qualified per MIL-PRF-19500/545.

What is the maximum operating junction temperature for this transistor?

The maximum operating temperature is +200°C.