Single Bipolar Transistors JANSM2N2222AUA/TR product image

JANSM2N2222AUA/TR

$133.41
  • Description:TRANS NPN 50V 0.8A UA
  • Series:-

SKU:d90c9df528df Category: Brand:

  
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JANSM2N2222AUA/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A UA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSM2N2222AUA/TR

  • Description:TRANS NPN 50V 0.8A UA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:650 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UA
  • Grade:Military
  • Qualification:MIL-PRF-19500/255

Single Bipolar Transistors datasheet and documents for JANSM2N2222AUA/TR

JANSM2N2222AUA/TR

Single Bipolar Transistors Overview

The JANSM2N2222AUA/TR is a radiation-hardened NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-reliability aerospace and military applications requiring resistance to ionizing radiation. The device features a surface-mount ceramic package, specifically the UA configuration, which provides hermetic sealing. Key electrical characteristics include a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 800 mA. The component is qualified to MIL-PRF-19500/255 standards with a radiation hardness level of 3 krad(Si).

Single Bipolar Transistors Feature Summary

  • Radiation hardened design qualified to MIL-PRF-19500/255 specifications for space and defense environments.
  • Hermetic ceramic surface-mount packaging ensures environmental stability and reliability.
  • High-speed switching capability suitable for demanding analog and digital circuit applications.

Single Bipolar Transistors Applications

  • Aerospace satellite communication systems
  • Military radar signal processing circuits
  • Spacecraft power management modules

Single Bipolar Transistors Procurement Notes

Verify the specific radiation qualification level and package variant against the latest manufacturer datasheet before procurement. Confirm that the ordering suffix matches the required hermetic seal and lead frame material. Ensure compatibility with automated surface-mount assembly processes due to the specific package geometry. Request batch-specific test reports if required for mission-critical validation.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is a primary constraint for NPN switching applications. Compare total ionizing dose requirements against the 3 krad(Si) specification to ensure adequate margin. Evaluate thermal dissipation capabilities within the ceramic package relative to the system's power budget. Consider mechanical constraints imposed by the surface-mount footprint during PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip Technology. The JANS designation indicates compliance with MIL-PRF-19500 Level S standards, ensuring strict quality control and screening procedures. It serves as a specialized alternative to commercial grade transistors in environments where single-event effects and latch-up are critical failure modes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: JANSM2N2222AUB.

JANSM2N2222AUA/TRJANSM2N2222AUA/TR
$133.41
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