Single Bipolar Transistors JANSM2N2222AUB product image

JANSM2N2222AUB

$85.97
  • Description:TRANS NPN 50V 0.8A UB
  • Series:-

SKU:ace14a592cc2 Category: Brand:

  
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JANSM2N2222AUB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSM2N2222AUB

  • Description:TRANS NPN 50V 0.8A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/255

Single Bipolar Transistors datasheet and documents for JANSM2N2222AUB

JANSM2N2222AUB

Single Bipolar Transistors Overview

The JANSM2N2222AUB is a radiation-hardened NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 0.8 A and a collector-emitter breakdown voltage of 50 V. The device is housed in a hermetically sealed ceramic surface-mount package with three terminals. It is qualified to MIL-PRF-19500/255 standards, specifically offering resistance to 3 kRad (Si) total ionizing dose radiation.

Single Bipolar Transistors Feature Summary

  • Radiation hardened design qualified for 3 kRad (Si) total ionizing dose exposure per MIL-PRF-19500/255 specifications.
  • Hermetically sealed ceramic surface-mount construction ensures reliability in harsh environments.
  • Single NPN element configuration optimized for general-purpose switching applications.

Single Bipolar Transistors Applications

  • Military aerospace systems requiring radiation tolerance
  • High-reliability satellite communication circuits
  • Harsh environment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific radiation qualification level against project requirements, as this part is designated for 3 kRad (Si). Confirm that the ceramic surface-mount UB package aligns with the PCB footprint and assembly capabilities. Ensure compliance with relevant military procurement standards and export control classifications such as EAR99 before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when radiation hardness is mandatory for space or high-altitude applications. The 0.8 A current rating supports moderate power switching needs within a compact surface-mount form factor. Compare against other MIL-PRF-19500 levels if higher radiation tolerance is required for the specific mission profile.

Single Bipolar Transistors Part Context

This device belongs to the 2N2222 family of NPN switching transistors produced under military specifications. While standard commercial versions exist in through-hole packages, this variant utilizes a specialized ceramic surface-mount package designed for enhanced durability and environmental sealing in critical electronic systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JANSD2N2222AUB, JANSP2N2222AUB, JANSL2N2222AUB, and JANSR2N2222AUB from the same manufacturer series, which offer varying radiation hardness levels while maintaining identical pinouts and electrical characteristics.

JANSM2N2222AUBJANSM2N2222AUB
$85.97
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