JANSR2N7389U

$330.11

Description：MOSFET P-CH 100V 6.5A 18ULCC
Series：-
Mfr：Microsemi Corporation
Package：Tray

SKU:ea12aad96193 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

JANSR2N7389U is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET P-CH 100V 6.5A 18ULCC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for JANSR2N7389U

Description：MOSFET P-CH 100V 6.5A 18ULCC
Series：-
Mfr：Microsemi Corporation
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：12V
Rds On (Max) @ Id, Vgs：350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 12 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C
Grade：Military
Qualification：MIL-PRF-19500/630
Mounting Type：Surface Mount
Supplier Device Package：18-ULCC (9.14x7.49)
Package / Case：18-CLCC

Single FETs, MOSFETs datasheet and documents for JANSR2N7389U

JANSR2N7389U

Single FETs, MOSFETs Overview

The JANSR2N7389U is a high-reliability P-channel power MOSFET designed for radiation-hardened applications. It features a -100V drain-source voltage rating and supports continuous current operation up to 6.5A at case temperature. The device is housed in an 18-pin ULCC surface-mount package, providing 25W of thermal dissipation capability. It is engineered with Total Ionizing Dose (TID) hardening to withstand 100kRad environments, ensuring stable performance in harsh aerospace conditions.

Single FETs, MOSFETs Feature Summary

Radiation-tolerant design hardened against total ionizing dose effects
P-channel configuration optimized for high-voltage switching
Surface-mount construction for compact board integration

Single FETs, MOSFETs Applications

Spacecraft power distribution systems
Avionics load switching circuits
High-reliability satellite electronics

Single FETs, MOSFETs Procurement Notes

Verify the component lifecycle status before procurement as this part may be obsolete or restricted. Confirm specific radiation hardness certifications required for your mission profile. Check for authorized distributors offering genuine Microsemi inventory. Ensure compatibility with existing PCB footprints and thermal management strategies.

Single FETs, MOSFETs Selection Notes

Select this component when TID radiation tolerance is critical for system longevity. Compare electrical parameters against standard commercial alternatives if operating in non-radiation environments. Evaluate thermal requirements carefully due to the 25W power limit. Consider availability constraints associated with specialized military-grade semiconductors.

Single FETs, MOSFETs Part Context

This device belongs to the JANS series of radiation-hardened semiconductors manufactured by Microsemi Corporation. These components are specifically qualified for use in space and defense applications where standard commercial parts would fail due to environmental stressors like cosmic radiation.