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The JANTX2N2857 is a silicon NPN RF small-signal bipolar junction transistor (BJT) manufactured by Microsemi. It is designed for ultra-high frequency applications and features hermetic sealing in a ceramic CERSOT-3 package. The device operates with a maximum collector current of 0.04 A and a collector-emitter voltage of 15 V. It exhibits a minimum DC current gain of 30 and supports operating temperatures up to 200 °C. Qualified per MIL-PRF-19500 standards, this component provides high reliability for demanding military and aerospace environments.
Verify the specific qualification level required for your application, as the base part number may correspond to JAN, JANTX, or JANTXV grades. Confirm that the supplier provides documentation proving compliance with MIL-PRF-19500 screening procedures. Ensure the received units match the specified hermetic seal integrity and die inspection standards mandated for this component class.
Select this component when designing circuits that demand high-frequency performance combined with strict environmental resilience. The CERSOT-3 package requires appropriate mounting techniques to maintain thermal and mechanical integrity. Verify that the 15 V collector-emitter voltage rating aligns with the system's peak operational limits to prevent breakdown during transient events.
This transistor belongs to the 2N2857 family, which includes variants such as the 2N2857UBJ, 2N2857UBJX, and 2N2857UBJV. These devices share similar electrical characteristics but differ in their specific military qualification levels and screening requirements. The family is recognized for its consistent performance in high-stress electronic environments.
Direct replacements include the 2N2857UBJX for JANTX level equivalents. Verify pinout compatibility and ensure the substitute meets the same MIL-PRF-19500 qualification standards. Cross-reference thermal resistance values to confirm adequate heat dissipation capabilities in the target assembly.