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The JANTX2N2857UB is a silicon NPN RF small-signal bipolar junction transistor designed for ultra-high frequency applications. It features a hermetically sealed ceramic construction with three pins, specifically the CERSOT-3 package. The device supports a maximum collector current of 0.04 A and operates at a maximum collector-emitter voltage of 15 V. It exhibits a minimum DC current gain (hFE) of 30 and maintains a maximum collector capacitance of 1 pF. The component is qualified to the JANTX level under MIL-PRF-19500 standards.
Verify that the specific part number matches the required JANTX qualification level rather than commercial or lower-tier JAN variants. Confirm the package type corresponds to the CERSOT-3 specification. Ensure compliance with MIL-PRF-19500 screening requirements if mission-critical performance is necessary. Check for any product change notifications regarding manufacturing updates.
Select this component when high-frequency operation requires low capacitance and stable gain in harsh environments. The JANTX level provides enhanced screening compared to standard JAN parts. Consider the 15 V voltage limit and 0.04 A current capacity during circuit design. Verify thermal management requirements for the ceramic package.
This transistor belongs to the 2N2857 family offered by Microsemi, which includes various qualification levels such as JAN, JANTX, and JANS. The JANTX designation indicates a higher reliability tier suitable for demanding aerospace and defense applications. The family shares similar electrical characteristics but differs in screening intensity and radiation hardness testing.
Direct substitutes include other JANTX-level transistors from the same manufacturer family. Cross-reference with equivalent military specifications to ensure compatibility. Verify pinout and package dimensions match the existing design constraints.