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JANTX2N3507 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 3A TO-39. Review the specifications below when checking this part for your BOM.
The JANTX2N3507 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 3A. The device is designed for through-hole mounting in a TO-126 package, with a total power dissipation capability of 1W. It operates within a temperature range from -65°C to +175°C.
Verify the specific manufacturer lot traceability and radiation hardness certification levels required for your mission profile. Confirm that the TO-126 lead configuration matches your PCB footprint design constraints before finalizing procurement orders.
Select this component when high current capacity and ruggedized packaging are necessary. Ensure thermal management strategies account for the 1W dissipation limit in enclosed environments. Validate that the 50V breakdown voltage exceeds peak circuit transients.
This part belongs to the JAN series of military-grade semiconductors produced by Microchip. These components adhere to strict MIL-SPEC standards for quality and reliability, distinguishing them from commercial grade equivalents through enhanced screening processes and material purity controls.
Direct substitutes include the JAN2N3507 and JANS2N3507 variants. Verify pinout compatibility and ensure the replacement meets the same radiation tolerance specifications.
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