JANTX2N7335

FET, MOSFET Arrays Overview

The JANTX2N7335 is a high-reliability P-channel power field-effect transistor manufactured by Microsemi. It features a four-element configuration with built-in diodes, housed in a hermetically sealed MO-036AB ceramic metal-sealed cofired DIP package with 14 pins. The device operates in enhancement mode and utilizes silicon MOS technology. Key electrical ratings include a maximum drain current of 0.75 A, a minimum drain-source breakdown voltage of 100 V, and a maximum on-resistance of 1.73 ohms. It provides an avalanche energy rating of 75 mJ.

FET, MOSFET Arrays Feature Summary

• Hermetically sealed construction for environmental protection
• High reliability design suitable for demanding applications
• Four-element configuration with integrated diodes

FET, MOSFET Arrays Applications

• Military aerospace systems
• Spacecraft electronics
• High-reliability industrial control

FET, MOSFET Arrays Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel is authorized to handle military-grade components. Confirm compliance with all applicable export control regulations and material declarations prior to finalizing the purchase agreement.

FET, MOSFET Arrays Selection Notes

Select this component when a hermetically sealed P-channel MOSFET with high reliability is required. The 14-pin DIP form factor facilitates through-hole mounting in ruggedized enclosures. Consider the 1.73 ohm on-resistance and 0.75 A current limit for load matching. Verify thermal management requirements against the ceramic package capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the JANTX series of radiation-hardened or high-reliability semiconductors produced by Microsemi. These components are designed to meet stringent military specifications. The JANTX2N7335 specifically addresses the need for robust power switching in environments where standard commercial parts would fail due to harsh conditions or radiation exposure.

FET, MOSFET Arrays Replacement Considerations

Direct cross-references may exist under older Mil-Spec numbering conventions such as 2N7335 variants. Verify pinout compatibility and electrical parameters against the original design specifications before substitution. Consult Microsemi engineering for qualified alternate sources.