JANTXV2N3019A

Single Bipolar Transistors Overview

The JANTXV2N3019A is an NPN silicon low-power bipolar junction transistor manufactured by Microchip Technology. It operates within a temperature range of -65°C to +200°C and utilizes a TO-39-3 package for through-hole mounting. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 140 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a maximum DC collector current of 1 A with a power dissipation of 800 mW at 25°C. It features a minimum DC current gain (hFE) of 15 at 1 A and 10 V, and a maximum hFE of 300 at 500 mA and 10 V.

Single Bipolar Transistors Feature Summary

• High-temperature operation capability up to +200°C suitable for demanding environments
• Military-grade reliability defined by the JANTXV quality level under MIL-PRF-19500 specifications
• Robust voltage handling with a collector-base rating of 140 V

Single Bipolar Transistors Applications

• Military aerospace electronic systems requiring high thermal stability
• Radar signal processing circuits
• Aviation communication equipment amplifiers

Single Bipolar Transistors Procurement Notes

Verify that the component conforms to the JANTXV quality level requirements specified in MIL-PRF-19500/391G. Ensure the ordering documentation explicitly references the correct military specification revision to guarantee compliance with radiation hardness and screening standards required for defense applications.

Single Bipolar Transistors Selection Notes

Select this component when designs require NPN transistors capable of sustained operation at elevated temperatures exceeding standard commercial limits. The TO-39-3 metal can package provides superior thermal management compared to plastic alternatives. Confirm that the 800 mW power dissipation limit aligns with the thermal resistance characteristics of the target heat sink or circuit board layout.

Single Bipolar Transistors Part Context

This part belongs to the 2N3019 family of NPN silicon low-power transistors governed by MIL-PRF-19500. The JANTXV suffix indicates a specific quality tier within the military spectrum, distinct from JAN or JANS levels. These devices are engineered for critical applications where performance consistency and environmental resilience are mandatory.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JAN2N3019, JANTX2N3019, and JANS2N3019. Verify that the alternative grade meets the specific screening and reliability requirements of the original design before substitution.