Single Bipolar Transistors JANTXV2N3767P product image

JANTXV2N3767P

$143.65
  • Description:TRANS NPN 80V 4A TO66
  • Series:-

SKU:7690453178b3 Category: Brand:

  
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JANTXV2N3767P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 4A TO66. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N3767P

  • Description:TRANS NPN 80V 4A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 100mA, 1A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 5V
  • Power - Max:25 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for JANTXV2N3767P

JANTXV2N3767P

Single Bipolar Transistors Overview

The JANTXV2N3767P is a high-power NPN silicon bipolar junction transistor manufactured by Microchip Technology. It features an 80V collector-emitter breakdown voltage and supports a maximum continuous collector current of 4A. The device is housed in a TO-66 metal can package, designed for through-hole mounting. It offers a maximum power dissipation of 20W and operates within a junction temperature range of -65°C to +175°C. This component is classified as a military-grade part, ensuring reliability under extreme environmental conditions.

Single Bipolar Transistors Feature Summary

  • Military-grade radiation hardness and reliability suitable for harsh environments
  • High power handling capability with 20W dissipation rating
  • Robust metal TO-66 hermetic packaging for thermal stability

Single Bipolar Transistors Applications

  • Military radar systems
  • Aviation communication equipment
  • Spacecraft power regulation circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against official Microchip documentation to confirm package or screening variations. Ensure compliance with export control regulations (EAR99) and confirm RoHS exemption status for defense applications. Request full datasheet and test reports from authorized distributors to validate lot traceability and quality standards.

Single Bipolar Transistors Selection Notes

Select this component when high power density and ruggedness are required in space-constrained military designs. Compare thermal resistance values against system heat sinks. Verify that the 80V V(BR)CEO meets circuit voltage requirements with adequate safety margins. Consider the TO-66 footprint compatibility during PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the 2N3767 family of high-power NPN transistors produced by Microchip's Microsemi division. These devices are engineered for aerospace and defense sectors where standard commercial parts fail due to radiation or temperature extremes. The JANTXV prefix indicates enhanced screening levels beyond standard military specifications.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N3767 and 2N3767J. Verify pinout compatibility and ensure replacement parts meet the same MIL-SPEC screening requirements. Cross-reference thermal characteristics to maintain system performance integrity.

JANTXV2N3767PJANTXV2N3767P
$143.65
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