JANTXV2N3867S

Single Bipolar Transistors Overview

The JANTXV2N3867S is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It features a short-lead through-hole package designed for high-reliability applications. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 3 mA. With a power dissipation rating of 1 W, it operates within an extended temperature range from -65 °C to +200 °C. This component is classified as a military-grade BJT suitable for demanding environments.

Single Bipolar Transistors Feature Summary

• Radiation-hardened construction for space and defense use
• Extended operating temperature range up to 200 °C
• Short-lead lead frame design for mechanical stability

Single Bipolar Transistors Applications

• Satellite power management systems
• Military communication equipment
• High-reliability industrial control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix S indicates the short-lead variant configuration. Confirm radiation hardness levels match mission requirements. Check for recent Product Change Notifications regarding manufacturing site updates. Ensure compatibility with existing thermal management designs due to the 1 W dissipation limit.

Single Bipolar Transistors Selection Notes

Select this part when high voltage tolerance and extreme temperature resilience are required in a compact form factor. Compare against standard 2N3867 variants if radiation hardening is not necessary. Evaluate thermal resistance characteristics for the specific PCB layout constraints.

Single Bipolar Transistors Part Context

This component belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip's Microsemi division. These devices are engineered for aerospace and defense sectors where reliability under ionizing radiation and thermal stress is critical. The short-lead version offers improved mechanical robustness compared to standard leaded counterparts.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JANTX2N3867S for non-radiation-hardened needs or the JANTXV2N3867 for standard lead lengths. Verify pinout compatibility before substitution.