Single Bipolar Transistors JANTXV2N5661U3 product image

JANTXV2N5661U3

  • Description:TRANS NPN 300V 2A U3
  • Series:-

SKU:4e5a24661341 Category: Brand:

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JANTXV2N5661U3 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 300V 2A U3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N5661U3

  • Description:TRANS NPN 300V 2A U3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 400mA, 2A
  • Current - Collector Cutoff (Max):200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 500mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:U3
  • Grade:Military
  • Qualification:MIL-PRF-19500/454

Single Bipolar Transistors datasheet and documents for JANTXV2N5661U3

JANTXV2N5661U3

Single Bipolar Transistors Overview

The JANTXV2N5661U3 is a high-voltage NPN power silicon transistor manufactured by Microchip Technology. Qualified per MIL-PRF-19500/454, this component features a collector-emitter voltage (VCEO) of 300 V and a maximum collector current (IC) of 2 A. It utilizes a TO-5 metal can package with three pins. The device supports an operating junction temperature range up to +200°C and offers a minimum DC current gain (hFE) of 25.

Single Bipolar Transistors Feature Summary

  • High-voltage capability suitable for demanding power applications
  • Military qualification compliant with MIL-PRF-19500/454 standards
  • Robust thermal performance supporting operation up to +200°C

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power amplification stages
  • Military and aerospace electronic systems

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability against the latest manufacturer datasheet before procurement. Confirm that the ordering suffix matches the required military grade specifications. Ensure compatibility with existing thermal management designs due to the high-temperature rating. Request full test reports if required for critical mission assurance.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized NPN transistor with 300 V blocking capability is required. The TO-5 package facilitates through-hole mounting in legacy or high-reliability chassis designs. Consider the 2 A current limit and 20 W power dissipation rating during circuit design. Verify that the application environment does not exceed the specified thermal limits.

Single Bipolar Transistors Part Context

This part belongs to the 2N566x series of NPN power transistors produced by Microchip's defense division. The series provides high-voltage solutions for specialized industrial and government sectors. The 'JANTXV' designation indicates a specific quality and screening level within the broader product family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JAN2N5661U3 and 2N5661E3. Verify pinout compatibility and electrical parameter tolerances before substitution.

JANTXV2N5661U3JANTXV2N5661U3

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