JANTXV2N5682

Single Bipolar Transistors Overview

The JANTXV2N5682 is a military-grade NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes TO-39 (TO-205AD) metal can packaging for through-hole mounting. The device supports a maximum collector-emitter voltage of 120 V and a continuous collector current of 1 A. Power dissipation is rated at 1 W. The component operates within a temperature range of -65°C to +200°C TJ.

Single Bipolar Transistors Feature Summary

• Military-grade reliability with extended thermal tolerance up to 200°C
• Robust NPN silicon construction in a hermetic TO-39 metal can package
• Designed for high-voltage switching and amplification applications

Single Bipolar Transistors Applications

• High-reliability aerospace electronic systems
• Military-grade power switching circuits
• Harsh environment amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and quality certification level required for your application, as military components often require strict adherence to procurement specifications. Confirm that the TO-39 package dimensions match your PCB or chassis layout constraints. Ensure thermal management solutions are adequate for the 1 W dissipation rating under your specific operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized NPN BJT is required for high-voltage environments exceeding standard commercial ratings. The 120 V breakdown voltage and 1 A current capacity suit moderate power handling needs. Consider the wide operating temperature range if the system faces extreme thermal fluctuations. The TO-39 package offers superior heat dissipation compared to plastic alternatives.

Single Bipolar Transistors Part Context

This part belongs to Microchip's JANTXV series of qualified bipolar transistors. The 'JANTXV' designation indicates a specific level of screening and testing for military and aerospace standards. It serves as a specialized alternative to general-purpose transistors where environmental resilience and long-term stability are critical design factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN polarity, 120 V minimum voltage rating, and TO-39 package form factor. Verify that any replacement maintains the same thermal resistance characteristics and meets the required military qualification standards for the target application.