JFE150DBVR

Overview

The JFE150DBVR is a single N-channel JFET in an SC-70-5 surface-mount package. It features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The device operates with a gate-source cutoff voltage of -1.2 V and provides a drain current of 50 mA at zero gate-source voltage. It has a minimum forward transconductance of 18 mS. The component functions within a temperature range of -40°C to +125°C.

Feature Summary

• Ultra-low-noise performance suitable for sensitive signal paths
• Extremely low gate current characteristic
• Single N-channel configuration

Applications

• Audio pre-amplifier circuits
• Low-noise sensor interfaces
• Precision measurement instrumentation

Procurement Notes

Verify the specific suffix against official Texas Instruments documentation to confirm pinout and electrical specifications match the required design parameters. Ensure the SC-70-5 package dimensions align with the PCB layout constraints. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement.

Selection Notes

Select this component when ultra-low noise and minimal gate leakage are critical requirements. The SC-70-5 package offers space efficiency for compact designs. Evaluate the 40 V breakdown rating against maximum circuit voltages. Consider the -1.2 V cutoff voltage for biasing network design in high-impedance applications.

Part Context

This part belongs to the JFE150 series of JFETs from Texas Instruments. It is categorized under discrete semiconductor transistors. The device is designed for applications requiring high input impedance and low noise figures, distinguishing it from standard MOSFETs or bipolar transistors in precision analog front-end stages.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific noise characteristics or gate leakage currents required for precision audio or measurement applications.