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Product Detailed Parameters
- Description：JFET N-CH 40V 50MA SC70-5
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：24 mA @ 10 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 0.1 µA
- Input Capacitance (Ciss) (Max) @ Vds：24pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package：SC-70-5
- Grade：-
- Qualification：-
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Overview
The JFE150DCKT is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Texas Instruments in a 5-pin SC70 package. It features ultra-low noise performance with voltage noise densities of 0.8 nV/√Hz at 1 kHz (IDS = 5 mA) and 0.9 nV/√Hz at 1 kHz (IDS = 2 mA). The device offers a maximum gate current of 10 pA, high transconductance up to 68 mS, and low input capacitance of 24 pF at VDS = 5 V. It supports drain-to-source voltages up to 40 V and operates within a temperature range of -40°C to +125°C.
Feature Summary
- Ultra-low noise performance optimized for audio and sensor applications
- Extremely low gate current minimizing shot noise contributions
- Integrated input protection diodes connected to separate clamp nodes
- High transconductance and high input impedance exceeding 1 TΩ
Applications
- Microphone inputs
- Hydrophones and marine equipment
- DJ controllers, mixers, and other DJ equipment
- Professional audio mixer or control surface
- Guitar amplifier and other music instrument amplifier
Procurement Notes
Verify the specific ordering suffix 'DCKT' corresponds to the SC70-5 package and tape-and-reel quantity configuration. Confirm that the component meets RoHS standards as indicated in manufacturer documentation. Ensure compatibility with the specified operating temperature range and absolute maximum ratings during system integration.
Selection Notes
Select this component when designing front-end stages for high-impedance sensors requiring minimal noise contribution. The device allows user-settable quiescent currents from 50 μA to 20 mA to balance noise performance against power consumption. Consider the SC70 package size constraints and thermal resistance characteristics for PCB layout planning.
Part Context
This part belongs to the JFE150 series of discrete JFETs built using Texas Instruments' high-performance analog bipolar process. It replaces older discrete JFET technologies by offering superior noise-to-power efficiency and tighter process parameter control. The series includes variants such as the DBV package option.
Replacement Considerations
Direct substitutes include the JFE150DBVT and JFE150DBVR, which share identical electrical specifications but utilize the SOT-23-5 package instead of the SC70-5 form factor.
