JFTJ105

JFTJ105

  • Description:JFET N-CH 25V SOT223-4
  • Series:-

SKU:413218d58ac4 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 25V SOT223-4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):25 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):500 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:4.5 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):3 Ohms
  • Power - Max:1 W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-4
  • Grade:-
  • Qualification:-

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JFTJ105

Overview

The JFTJ105 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes Silicon technology and is housed in a surface-mount SOT-223-4 package. The device features a single configuration with a gate-to-source breakdown voltage of -25 V and a gate-to-source cutoff voltage of -6 V. At Vgs=0, the drain-source current ranges from 500 mA to 1 A at Vds=15 V. The maximum power dissipation is 1 W, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

  • N-Channel silicon JFET construction for robust switching performance
  • Surface-mount SOT-223-4 packaging for automated assembly integration
  • High drain-source current capability suitable for power control applications

Applications

  • Low-side switching circuits
  • Power management systems
  • Industrial control interfaces

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure ESD handling protocols are followed during storage and assembly. Validate thermal management strategies for the SOT-223-4 package under maximum load conditions. Cross-reference pinout configurations with PCB layout specifications.

Selection Notes

Select this component for applications requiring high-current N-channel switching in a compact surface-mount form factor. Evaluate thermal dissipation capabilities against system power constraints. Consider the -25 V gate-source breakdown limit for control circuit compatibility. Assess the SOT-223-4 footprint against available board space. Verify operating temperature range suitability for the intended environment.

Part Context

The JFTJ105 belongs to the JFTJ1 series of N-Channel JFETs from onsemi. This series provides discrete transistor solutions for power switching and amplification tasks. The JFTJ105 variant specifically targets surface-mount designs requiring higher current handling than standard small-signal transistors.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation.

JFTJ105JFTJ105

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