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KFC4B21320L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 12V 2.5A 4CSP. Review the specifications below when checking this part for your BOM.
The KFC4B21320L is a dual N-channel MOSFET with integrated gate resistors, designed for lithium-ion secondary battery protection circuits. It features a CSP XLGA004-W-0808-RA package and RoHS compliance. Key electrical parameters include a source-source breakdown voltage of 12 V, a typical on-resistance (RSS(on)) of 36 mΩ at VGS = 4.5 V, and a maximum DC source current of 4 A. The device supports a pulsed source current of 25 A and operates within a channel temperature range up to 150 °C.
Verify component authenticity through official Nuvoton Technology Corporation Japan channels or authorized distributors. Confirm the specific revision status against the datasheet Rev 1.00 issued February 4, 2021. Ensure packaging matches the standard embossed type thermo-compression sealing reel format. Validate RoHS compliance documentation prior to integration into final assemblies.
Select this component when designing compact battery management systems requiring low on-resistance in a minimal footprint. The integrated gate resistors simplify driver circuit design by reducing external component count. Consider the 12 V breakdown voltage limit and thermal resistance characteristics when determining heat dissipation requirements for high-current protection scenarios.
This part belongs to the KFCAB21500L product standards family from Nuvoton Technology Corporation Japan. It is categorized as a specialized power transistor solution tailored for portable electronics and battery-powered devices where space constraints and efficiency are critical design factors.
No public confirmed substitute part numbers are available in the provided documentation. Consult Nuvoton directly for potential alternative components within the same product line.
The maximum DC source current is 2.5 A for FET1 and 4 A for FET2.
Yes, the device features installed internal gate resistors.
The channel temperature can reach up to 150 °C, with a storage temperature range of -55 to +150 °C.
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