FET, MOSFET Arrays KFC4B21320L product image

KFC4B21320L

  • Description:MOSFET 12V 2.5A 4CSP
  • Series:-

SKU:ff92f378db16 Category: Brand:

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KFC4B21320L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 12V 2.5A 4CSP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for KFC4B21320L

  • Description:MOSFET 12V 2.5A 4CSP
  • Series:-
  • Mfr:Nuvoton Technology Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Rds On (Max) @ Id, Vgs:48mOhm @ 1.25A, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds:205pF @ 10V
  • Power - Max:340mW (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-XFLGA, CSP
  • Supplier Device Package:4-CSP (0.8x0.8)
  • Grade:Automotive
  • Qualification:AEC-Q100

FET, MOSFET Arrays datasheet and documents for KFC4B21320L

KFC4B21320L

FET, MOSFET Arrays Overview

The KFC4B21320L is a dual N-channel MOSFET with integrated gate resistors, designed for lithium-ion secondary battery protection circuits. It features a CSP XLGA004-W-0808-RA package and RoHS compliance. Key electrical parameters include a source-source breakdown voltage of 12 V, a typical on-resistance (RSS(on)) of 36 mΩ at VGS = 4.5 V, and a maximum DC source current of 4 A. The device supports a pulsed source current of 25 A and operates within a channel temperature range up to 150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration with built-in gate resistors
  • Optimized for lithium-ion secondary battery protection applications
  • Compact Chip Size Package (CSP) design

FET, MOSFET Arrays Applications

  • Lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Nuvoton Technology Corporation Japan channels or authorized distributors. Confirm the specific revision status against the datasheet Rev 1.00 issued February 4, 2021. Ensure packaging matches the standard embossed type thermo-compression sealing reel format. Validate RoHS compliance documentation prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when designing compact battery management systems requiring low on-resistance in a minimal footprint. The integrated gate resistors simplify driver circuit design by reducing external component count. Consider the 12 V breakdown voltage limit and thermal resistance characteristics when determining heat dissipation requirements for high-current protection scenarios.

FET, MOSFET Arrays Part Context

This part belongs to the KFCAB21500L product standards family from Nuvoton Technology Corporation Japan. It is categorized as a specialized power transistor solution tailored for portable electronics and battery-powered devices where space constraints and efficiency are critical design factors.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult Nuvoton directly for potential alternative components within the same product line.

FET, MOSFET Arrays FAQ

What is the maximum continuous source current for each channel?

The maximum DC source current is 2.5 A for FET1 and 4 A for FET2.

Does the KFC4B21320L include external gate resistors?

Yes, the device features installed internal gate resistors.

What is the operating temperature range for the channel?

The channel temperature can reach up to 150 °C, with a storage temperature range of -55 to +150 °C.

KFC4B21320LKFC4B21320L

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