KFCAB21520L

$0.45

Description：MOSFET 2N-CH 12V 16A 10SMD
Series：-

SKU:1b8262b485a3 Category: FET, MOSFET Arrays Brand: Nuvoton Technology Corporation

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Product introduction

KFCAB21520L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 2N-CH 12V 16A 10SMD. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for KFCAB21520L

Description：MOSFET 2N-CH 12V 16A 10SMD
Series：-
Mfr：Nuvoton Technology Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel, Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Rds On (Max) @ Id, Vgs：2mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：5250pF @ 10V
Power - Max：540mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-SMD
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for KFCAB21520L

KFCAB21520L

FET, MOSFET Arrays Overview

The KFCAB21520L is a dual N-channel MOSFET with integrated gate resistors, designed for lithium-ion secondary battery protection circuits. It features a CSP package and halogen-free/RoHS compliance. Key electrical parameters include a source-source breakdown voltage of 12 V, a typical source-source on-state resistance (RSS(on)) of 1.6 mΩ at VGS = 3.8 V, and a DC source current rating of up to 35 A. The device operates within a channel temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Integrated gate resistors for simplified circuit design
Dual N-channel configuration in a compact Chip Size Package (CSP)
Halogen-free and RoHS compliant construction

FET, MOSFET Arrays Applications

Lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific package variant and marking code against the official datasheet before procurement. Confirm that the intended application does not fall under insecure usage categories such as medical or automotive safety systems. Ensure thermal management aligns with the specified thermal resistance values for the target PCB substrate.

FET, MOSFET Arrays Selection Notes

Select this component when a low-profile dual N-channel solution with built-in gate resistors is required for battery protection. Consider the 12 V source-source voltage limit and the 1.6 mΩ typical on-resistance for efficiency requirements. Evaluate the CSP package constraints against available board space and soldering capabilities.

FET, MOSFET Arrays Part Context

This part belongs to Nuvoton's discrete semiconductor portfolio, specifically focusing on power MOSFETs for consumer electronics and battery management applications. The inclusion of gate resistors distinguishes it from standard dual MOSFETs, offering a more compact assembly solution for high-current switching tasks.