KGF20N05D

FET, MOSFET Arrays Overview

The KGF20N05D is a dual N-channel power MOSFET featuring a 5.5V drain-to-source voltage rating and a continuous drain current of 20A. It utilizes a 20-bump WLCSP package with a die size of 2.475mm x 1.170mm. The device achieves an on-state resistance (rDS(ON)) as low as 1.6mΩ at VGS = 4.5V and ID = 10A per MOSFET, or 0.8mΩ in parallel configuration. Total gate charge (Qg) is typically 6.7nC at VGS = 4.5V. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Industry-leading figures of merit for rDS(ON) multiplied by Qg and rDS(ON) multiplied by Qgd
• Low profile chip-scale WLCSP package compatible with standard SMT assembly processes
• Known Good FET (KGF) quality assurance process integrated into manufacturing
• High frequency switching capability enabled by low total gate charge

FET, MOSFET Arrays Applications

• Point-of-load DC/DC converters
• Portable electronics
• OR'ing diodes

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and reel specifications against Renesas technical briefs TB347 and TB363 before procurement. Confirm moisture sensitivity level (MSL) ratings and Pb-free reflow profiles according to TB493 to ensure compatibility with your assembly line requirements. Ensure the component marking location on the bottom of the part aligns with your automated optical inspection setup.

FET, MOSFET Arrays Selection Notes

Select this component when board space is constrained due to its small footprint WLCSP package. Evaluate thermal performance based on the specified thermal resistance values for FR-4 substrates. Consider the parallel connection option if lower on-state resistance is required for high-current applications. Verify that the 5.5V voltage rating meets the system's maximum operating conditions.

FET, MOSFET Arrays Part Context

The KGF20N05D belongs to Renesas' dual N-channel 5.5V power MOSFET family, which also includes parts like the KGF16N05D and KGF6N05D. These devices share similar fabrication technologies integrating CMOS and WLCSP processes. They are designed to offer high power density and low vertical profiles suitable for modern compact electronic designs.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes within the same series include the KGF16N05D and KGF6N05D. When replacing, verify that the alternative part's current handling capabilities and on-state resistance meet the original design requirements. Ensure the package dimensions and pinout remain compatible with the existing PCB layout.

FET, MOSFET Arrays FAQ

What is the typical thermal resistance (θJA) for the KGF20N05D?

The typical thermal resistance (θJA) is 5°C/W when mounted on a 1-inch square 2oz copper clad FR-4 substrate.

How does the on-state resistance change when both MOSFETs are connected in parallel?

When connected in parallel, the on-state resistance drops significantly; it is typically 0.80mΩ at VGS = 4.5V and ID = 10A, compared to 1.60mΩ for a single MOSFET.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is rated at 40A.