KSA1156YSTSTU

Single Bipolar Transistors Overview

The KSA1156YSTSTU is a PNP silicon epitaxial planar transistor manufactured by onsemi. It features a collector-emitter sustaining voltage of -400 V and a continuous collector current rating of -0.5 A. The device utilizes a TO-126-3LD (CASE 340AS) flange mount plastic package. Electrical characteristics include a DC current gain (hFE) range of 100 to 200 for the 'Y' classification, a collector-base voltage of -400 V, and an emitter-base voltage of -7 V. Maximum power dissipation is rated at 1 W in free air and 10 W with case mounting at 25°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability up to -400 V
• Low collector saturation voltage for efficient switching
• High speed switching performance suitable for rapid transitions
• Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

• High voltage switching circuits
• Low power switching regulators
• DC-DC converter topologies

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and lead-free status. Confirm that the 'Y' hFE binning aligns with circuit gain requirements. Ensure thermal management strategies account for the specified derating curves. Validate compliance with RoHS directives if required by the target market regulations.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and fast switching are required in a compact form factor. The TO-126 package facilitates heat sinking for higher power applications. Verify that the base drive current meets the minimum requirements for saturation at the intended load current. Consider the safe operating area limits under pulse conditions for transient loads.

Single Bipolar Transistors Part Context

This part belongs to the KSA1156 family of PNP transistors designed for high-voltage switching applications. It is commonly used in power supply designs where voltage ratings exceed standard low-voltage transistors. The device is manufactured using epitaxial planar technology for improved reliability and performance consistency across production batches.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other PNP transistors with similar -400 V ratings and TO-126 packaging. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets for matching hFE ranges and switching times to ensure circuit functionality remains unchanged.