Single Bipolar Transistors KSA940H1TU product image

KSA940H1TU

$0.17
  • Description:TRANS PNP 150V 1.5A TO-220-3
  • Series:-

SKU:6bafdcebb67b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

KSA940H1TU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 150V 1.5A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSA940H1TU

  • Description:TRANS PNP 150V 1.5A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:4MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSA940H1TU

KSA940H1TU

Single Bipolar Transistors Overview

The KSA940H1TU is a PNP epitaxial silicon bipolar junction transistor (BJT) manufactured by onsemi. It is designed for through-hole mounting in TO-220-3 packages. Key electrical specifications include a maximum collector current of 1.5 A and a collector-emitter breakdown voltage (VCEO) of 150 V. The device features a collector-base voltage (VCBO) of 150 V and an emitter-base voltage (VEBO) of 5 V. DC current gain (hFE) ranges from a minimum of 40 to a maximum of 140, with a transition frequency (fT) of 4 MHz. Power dissipation is rated at 25 W, and the maximum operating junction temperature is +150°C.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for single-transistor applications
  • High voltage handling capability with 150 V breakdown ratings
  • Through-hole installation compatibility via TO-220-3 package
  • Moderate power switching performance with 1.5 A continuous current

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Power regulation modules
  • Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify component authenticity due to market prevalence of代工贴牌 units. Confirm RoHS compliance status via official datasheet. Check lifecycle status as the product may be approaching obsolescence. Ensure package integrity matches TO-220-3 specifications. Validate supplier authorization for onsemi products.

Single Bipolar Transistors Selection Notes

Select this PNP BJT for applications requiring moderate voltage isolation up to 150 V and current handling near 1.5 A. Consider thermal management requirements given the 25 W power dissipation rating. Evaluate hFE range suitability for specific gain requirements. Compare against NPN alternatives if circuit topology demands complementary pairing.

Single Bipolar Transistors Part Context

Part of the KSA940 series family of bipolar transistors. Manufactured by onsemi, formerly Motorola Semiconductor. Designed for robust industrial and commercial electronics. Utilizes epitaxial silicon technology for reliable performance. Commonly used in power electronics and signal processing contexts.

Single Bipolar Transistors Replacement Considerations

KSA940TU is a related variant within the same series. Verify pinout and electrical parameter compatibility before substitution. Ensure package type matches application constraints.

KSA940H1TUKSA940H1TU
$0.17
Buy Now