Single Bipolar Transistors KSC1675RBU product image

KSC1675RBU

  • Description:TRANS NPN 30V 0.05A TO-92-3
  • Series:-

SKU:c13518c5ec4f Category: Brand:

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KSC1675RBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.05A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSC1675RBU

  • Description:TRANS NPN 30V 0.05A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1mA, 6V
  • Power - Max:250 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for KSC1675RBU

KSC1675RBU

Single Bipolar Transistors Overview

The KSC1675RBU is an NPN epitaxial silicon RF bipolar transistor manufactured by onsemi. It operates at a frequency of 300 MHz with a minimum DC current gain (hFE) of 120. The device supports a maximum collector-emitter voltage (VCEO) of 30 V and an emitter-base voltage (VEBO) of 5 V. Continuous collector current is rated at 50 mA, with power dissipation of 250 mW. It functions within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon construction for RF applications
  • High DC current gain suitable for amplification
  • Through-hole TO-92 package design

Single Bipolar Transistors Applications

  • RF signal amplification circuits
  • General-purpose switching applications
  • Low-power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm RoHS compliance details via official documentation. Check regional availability restrictions as distribution may be limited. Validate datasheet revisions against specific manufacturing lot requirements.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage RF applications requiring moderate current handling. Ensure thermal management accommodates the 250 mW dissipation limit. Verify that the 300 MHz operating frequency meets circuit requirements. Consider the TO-92 package constraints for PCB layout.

Single Bipolar Transistors Part Context

This part belongs to onsemi's RF bipolar transistor portfolio. It utilizes standard silicon technology optimized for radio frequency performance. The TO-92 package provides a cost-effective solution for discrete transistor implementations in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

KSC1675CYBU is a documented variant within the same product family. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official replacement guides for confirmed cross-reference data.

KSC1675RBUKSC1675RBU

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