KSC1730OTA

$0.03

Description：RF TRANS NPN 15V 1.1GHZ TO-92-3
Series：-

SKU:e07303d6dd65 Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V 1.1GHZ TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：1.1GHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：250mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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KSC1730OTA

Overview

The KSC1730OTA is an NPN epitaxial silicon transistor designed for VHF and UHF tuner oscillator applications. It features a high current gain bandwidth product of up to 1100 MHz and a maximum output capacitance of 1.5 pF. The device supports a collector current of 50 mA with a power dissipation rating of 250 mW. Voltage ratings include 15 V for collector-emitter, 30 V for collector-base, and 5 V for emitter-base. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.

Feature Summary

High current gain bandwidth product suitable for ultra-high frequency operations
Low output capacitance for improved signal integrity in RF circuits
Optimized for use in VHF and UHF tuner oscillators

Applications

VHF tuner oscillators
UHF tuner oscillators
RF amplifier stages

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor based on the provided datasheet documentation. Confirm RoHS compliance status through official component specifications before integration. Ensure the TO-92 package dimensions match the design constraints. Validate electrical parameters against the specific hFE classification required for the target circuit performance.

Selection Notes

Select this component when designing circuits requiring high-frequency performance at VHF and UHF bands. The low output capacitance makes it suitable for oscillator applications where signal stability is critical. Consider the 50 mA collector current limit and 250 mW power dissipation when determining thermal management requirements for the final assembly.

Part Context

This component belongs to the KSC series of NPN epitaxial transistors manufactured by Fairchild Semiconductor. It is specifically engineered for radio frequency applications, distinguishing itself from general-purpose transistors through its optimized high-frequency characteristics and low parasitic capacitance values.