KSC2073TU

Single Bipolar Transistors Overview

The KSC2073TU is an NPN epitaxial silicon bipolar junction transistor manufactured by Fairchild Semiconductor. It is housed in a TO-220AB flange mount package with three terminals. The device supports a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 150 V. It features a minimum DC current gain (hFE) of 40 and operates at junction temperatures up to 150 °C. The component is lead-free, RoHS compliant, and classified under EAR99.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction for reliable switching and amplification
• TO-220AB flange mount package enabling efficient heat dissipation
• High collector-emitter voltage rating suitable for demanding circuits

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• High voltage switching applications
• Power supply regulation stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor's discrete product portfolio has transitioned to ON Semiconductor. Confirm that the KSC2073TU designation corresponds to the original Fairchild datasheet specifications regarding pinout and electrical limits. Ensure the component matches the TO-220AB physical dimensions and lead configuration required for the target PCB footprint.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with 150V capability and 1.5A continuous current handling is required. The TO-220 package facilitates direct mounting to heatsinks for thermal management. Consider the hFE range and saturation voltage characteristics to ensure compatibility with the driving circuit requirements and load conditions.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose NPN transistor category within Fairchild's discrete semiconductor lineup. It shares the KSC2073 series identifier with variants such as the KSC2073H2TU, which utilizes a different internal marking or sub-package specification while maintaining core electrical parameters.