KSC2310RTA

Single Bipolar Transistors Overview

The KSC2310RTA is an NPN epitaxial silicon transistor designed for high-voltage applications. It features a collector-base voltage of 200 V and a collector-emitter voltage of 150 V, with a maximum collector current of 50 mA. The device offers a DC current gain ranging from 40 to 240 depending on the classification code (R, O, or Y). It operates within a junction temperature range of -55°C to +150°C and dissipates up to 800 mW of power. The component utilizes a TO-92L package.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 200 V collector-base breakdown rating
• Wide DC current gain range supporting various amplification requirements
• High frequency performance with a 100 MHz current gain bandwidth product

Single Bipolar Transistors Applications

• High voltage power amplifier circuits
• General purpose switching applications
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix (R, O, or Y) required for your design, as gain ranges vary significantly between codes. Confirm the manufacturer origin, as Fairchild Semiconductor assets were acquired by onsemi. Ensure the TO-92L package dimensions match your PCB footprint constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require high voltage handling exceeding standard low-voltage transistors. The 100 MHz bandwidth makes it suitable for audio and intermediate frequency applications. Consider the thermal derating curves if operating near the maximum power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the KSC series of NPN epitaxial transistors originally manufactured by Fairchild Semiconductor. The series is characterized by high voltage ratings and moderate current capabilities. The RTA suffix typically indicates a specific tape and reel packaging configuration for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

KSC2310YTA_Q

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the KSC2310?

The absolute maximum collector-base voltage (VCBO) is rated at 200 V.

How does the hFE classification affect performance?

The hFE classification determines the DC current gain range: R is 40-80, O is 70-140, and Y is 120-240.

Is this transistor suitable for RF applications?

Yes, it has a current gain bandwidth product (fT) of 100 MHz, making it appropriate for certain RF and audio frequency applications.