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KSC2690AOS is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 1.2A TO-126-3. Review the specifications below when checking this part for your BOM.
The onsemi KSC2690A is an NPN epitaxial silicon transistor housed in a TO-126-3LD package. It features a collector-emitter voltage (VCEO) of 160 V and a collector-base voltage (VCBO) of 160 V. The device supports a continuous DC collector current of 1.2 A and a pulse current of 2.5 A. Maximum power dissipation is rated at 1.2 W at 25°C ambient temperature, increasing to 20 W when the case is maintained at 25°C. The junction temperature limit is 150°C. Electrical characteristics include a minimum DC current gain (hFE) of 60 at IC = 0.3 A and a current gain bandwidth product (fT) of 155 MHz.
Verify the specific ordering suffix against the official datasheet to confirm packaging type. Options include bulk bags or tubes. Ensure the component meets lead-free requirements if mandated by project specifications. Confirm that the selected variant matches the required hFE classification for the intended circuit design.
Select this component for designs requiring high voltage handling and moderate current capacity in a flange-mountable package. Evaluate thermal management strategies based on the derating curves provided in the datasheet. Consider the complementary KSA1220A for balanced amplifier stages. Validate performance under actual operating conditions rather than relying solely on typical values.
This NPN transistor belongs to the KSC2690 series manufactured by onsemi. It is designed as a complement to the KSA1220A PNP device. The component utilizes epitaxial silicon technology to achieve its specified voltage and current ratings within the standard TO-126-3LD plastic enclosure.
The KSA1220A is documented as the complementary PNP device. Verify pinout compatibility and electrical parameters before substituting with other NPN transistors offering similar voltage and current ratings.
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