KSC2755YMTF

Overview

The KSC2755YMTF is an NPN epitaxial silicon transistor designed for VHF and TV tuner applications. It operates with a collector-emitter voltage of 30V and a collector current of 20mA, dissipating up to 150mW at 25°C. The device features a typical noise figure of 2.0dB and power gain of 23dB at 200MHz. It supports forward AGC capability to 30dB and offers hFE classifications ranging from 60 to 240. Packaged in SOT-23, it maintains junction temperatures up to 150°C.

Feature Summary

• Optimized for low noise figure and high power gain in VHF and TV tuner circuits
• Supports forward automatic gain control (AGC) functionality up to 30dB
• High current gain bandwidth product suitable for RF amplification

Applications

• VHF amplifier stages
• TV tuner front-end circuits
• RF signal amplification

Procurement Notes

Verify the component status carefully as datasheets may indicate obsolete or not recommended for new design statuses depending on the specific revision. Confirm the manufacturer origin, as Fairchild Semiconductor assets were acquired by onsemi. Ensure the ordering suffix matches the required tape and reel specifications for surface mount assembly processes.

Selection Notes

Select this component when designing VHF or TV tuner circuits requiring low noise figures around 2.0dB and high power gain near 23dB at 200MHz. Consider the 30V collector-emitter voltage rating and 20mA current limit for biasing networks. Evaluate the available hFE grades (R, O, Y) to match specific gain requirements for your amplifier topology.

Part Context

This part belongs to the KSC2755 series of NPN epitaxial silicon transistors originally manufactured by Fairchild Semiconductor. The 'YMTF' suffix typically denotes specific packaging and marking variations within the SOT-23 form factor. Following corporate acquisitions, these components are now managed under the onsemi portfolio, maintaining the original electrical specifications.

Replacement Considerations

Direct replacements should be sought among other NPN RF transistors in SOT-23 packages with similar VCBO/VCEO ratings of 30V and comparable noise figures at 200MHz. Verify that substitute devices offer equivalent forward AGC capabilities and power gain characteristics to ensure circuit performance stability without redesign.